Silicon Monocrystalline Furnace

Product introduction MCZ-6000 series networking magnetic silicon single crystal furnace is a device heated by graphite resistance heater in inert gas atmosphere, which uses polycrystalline silicon as raw material, and uses Czochralski method to grow dislocation-free single crystal. It can produce high quality single crystal desired by solar cell. The series device can use a thermal system of 18-24 inches, with a maximum feeding amount of 150 kg, and it is capable of drawing 6-8 inches silicon single crystal. Main technical parameters of MCZ-6000 series silicon single crystal furnace serial numberProduct models Technical parameters MCZ-6000FA/FCMCZ-6000HA/HCMCZ-6000KA/KC1Heating ways graphite resistance heatinggraphite resistance heatinggraphite resistance heating2Vacuum of black furnace (Pa) ≤3≤3≤33Leakage rate of black furnace (Pa/min) ≤0.1≤0.1≤0.14Standard charge size (kg) 901201505Crystal drawn diameter (inch) 6”- 8”6”- 8”6”- 8”6Thermal field size 18” 20”20” 22”22” 24”7Seed draw speed rang (mm/min) 0 100 100 108Seed rapid lift/fall speed (mm/min) ≥300≥300≥3009Seed rotating speed (rpm) 0 400 400 4010Crucible lift speed(mm/min) 0.02 2.50.02 2.50.02 2.511Crucible rotating speed (rpm) 0 300 300 3012Crucible lift maximum travel (mm) 40052550013Power supply (VAC)/frequency (Hz)/phase 380/ 50/ 3380/ 50/ 3380/ 50/ 314Transformer capacity (KVA) 20020020015The highest heating temperature(°c) 16001600160016Water inlet pressure/temperature (MPa / °c) ≤0.3 / ≤25≤0.3/ ≤25≤0.25/ ≤2517Argon consumption(liter/hour) 0 25000 25000 250018Overall dimension (mm) 2530x1703x57702520x3200x66172800x4000x700019Apparatus highest height (mm) 60506897700020Complete machine weight (kg) ≈5500≈7000≈700021Principal machine occupy area(mm) 2820×32002820×32002800×400022Complete machine occupy area(mm) 3000×60004000×60004000×7000