Flexible Shaft Silicon Monocrystalline

Product introductionMCZ-3000Z flexible shaft single silicon furnace is an apparatus for growing dislocation-free single crystal by czochralski method in inert gas atmosphere through heating graphite resistance heater and melting germanium semiconductor material. It can produce high quality single crystal desired by large scale integrated circuit. The single crystal furnace can use a 12” crucible to charge 30 kg, and draw 4”-6” single crystal; it also can use a 14” crucible for the maximum, charge 40 kg and draw 8” single crystal. Main technical parameters power supply: 380V AC±10% power frequency: 50HZpower phase: three-phasetransformer capacity: 110KVAheater power (maximum): 50KW(Ge),90KW(Si)heater volt (maximum): 45V(Ge),60V(Si)the highest heating temperature: 1600 degrees centigradecrystal diameter (maximum): Φ8″charge size: 30kgultimate vacuum in black furnace: ≤3Pamain chamber size: Φ620x1063(totaled by stretching parts of furnace drum and furnace cover)gate valve aperture: Φ260secondary chamber size: lower secondary chamber Φ260x660, upper secondary chamber φ230x958seed draw speed range: 0.2-10mm/minseed rapid speed range: 10-320mm/minseed rotating speed range: 2-40rpmcrucible lift rate range: 0.04-1mm/mincrucible rapid speed range: ≥35mm/mincrucible rotating speed: 1-30rpmtotal seed effective travel in chamber: 1550mmtotal seed effective travel in secondary chamber: 1100mmtotal crucible effective travel in secondary chamber: ≥370mmwater rate: 10m3/hprincipal machine height (maximum) (when secondary chamber lifts 130mm): 5080mmprincipal machine weight: ≈2500kg